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A matrix description of the these codes can also be given, but the transfer function matrix G ( x ) is usually more convenient. We always deal with delayfree transfer function matrices, for which it is not possible to factor out a common multiple x i from G ( x ) . That is, it is not possible to write G ( x ) = x"(x) for some i > 0 and any G ( x ) . 12.1.1 The State A convolutional encoder is a state machine. For both encoding and decoding purposes, it is frequently helpful to think of the state diagrams of the state machines, that is, a representation of the temporal relationships between the states portraying statehext-state relationships as a function of the inputs and the outputs. For an implementation with u memory elements, there are 2" states in the state diagram. Another representationwhich is extremely useful is a graph representingthe connections from states at one time instant to states at the next time instant. The graph is a bipartite graph, that is, a graph which contains two subsets of nodes, with edges running only between the two subsets. By stacking these bipartite graphs to show several time steps one obtains a graph known as a trellis, so-called because of its resemblance to a trellis that might be used for decorative purposes in landscaping. It may be convenient for some implementationsto provide a table indicatingthe statehext state information explicitly. From the statehext state table the state/previous state information can be extracted.

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The diodes have been cycled repeatedly without failure or degradation, and represent therefore the diode structures with the highest thermal stability of all semiconductors To overcome the size limitation of single-crystal diamond substrates, the concept has also been realized on boron-doped nanocrystalline diamond (NCD) [188] In this case the structure was grown by hot lament CVD on a 4-inch diameter Si-substrate using different growth regimes for the different layers The grain size varied during subsequent deposition steps but was in all cases below 100 nm at the top of the grown layer The p-type layer was boron doped, the n-type NCD material was grown with CH4 /H2 chemistry and a high percentage of N2 in the gas phase The layer exhibited n-type conductivity, similar to UNCD The electron concentration in the n-type layer was 3 1019 cm 3, and the electron mobility about 7 cm2 /Vs.

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15: Creating Lists . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 589

To print a document, select the Print command from the File menu. A standard Mac OS Print dialog box appears, with a number of advanced BBEdit printing options. Each printer type presents its own dialog box, of course; Figure B-10 shows the printer dialog box for Adobe s Acrobat PDFWriter.

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9/21/05

June 12, 2004

Also in this case, two barrier potentials of 40 eV and 07 eV were identi ed This suggested that the junction properties were similar those observed in the single crystal case However, in this case the entire layer stack is highly disordered This is re ected in a lower breakdown voltage, a lower current on/off ratio, and lower current densities in the forward direction, due to high series resistances Defect-activated leakage is rather pronounced and rectifying behavior was only observed for temperatures below about 350 C These results suggest that such a highly disordered structure exhibits substantial parasitic effects and, therefore, in its present status, is not suitable for high performance electronic diode structures As discussed in the beginning, power recti er diodes must combine two con icting properties (high blocking voltage and low forward loss).

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T ( D , N )= D 6 N + D 6 N 3 + 3 D 8 N + 5 D 8 N 4 + . * .

Run the Euclidean algorithm with a(x) = x2rand b(x) = S(x),until deg(ri (x)) < t . Then Q ( x ) = r j ( x ) and A(x) = t j ( x ) . Find the roots of A(x) and the error locators Xi.

62.6953 62.5122 62.5000

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